Item

2"Specification

Unit

Remark

Substrate grade

Sapphire Ingot

~

Crystal growth method

Kyropulos method

~

Optical Characteristic

High purity optical grade monocrystalline

~

Orientation

C-plane(0001) ± 0.1?

~

Diameter of ingot

51.0  ±0.1

mm

Length of Prime flat

16.0 ±0.5

mm

Orientation of Prime flat

A-plane(1 1-2 0) ± 0.2?

~

Rod Length

≧ 50

mm

Surface Finish

Circumference surface Ra < 1μm

Both ends surface Ra < 1 μm

μm

Chip size on both sides

< 0.5 mm x 0.5 mm

~

Crystal Bubble/Defects Percentage

< 15%

~

Defects zones include bubbles, scattering centers, grain boundary, twinning, inclusion, stress distortion, and cracks inside. Defect zones need to be marked。