Item
|
2"Specification |
Unit |
Remark |
Substrate grade
|
Sapphire Ingot |
~ |
|
Crystal growth method
|
Kyropulos method |
~ |
|
Optical Characteristic
|
High purity optical grade monocrystalline |
~ |
|
Orientation
|
C-plane(0001) ± 0.1? |
~ |
|
Diameter of ingot
|
51.0 ±0.1 |
mm |
|
Length of Prime flat
|
16.0 ±0.5 |
mm |
|
Orientation of Prime flat
|
A-plane(1 1-2 0) ± 0.2? |
~ |
|
Rod Length
|
≧ 50 |
mm |
|
Surface Finish
|
Circumference surface Ra < 1μm Both ends surface Ra < 1 μm |
μm |
|
Chip size on both sides
|
< 0.5 mm x 0.5 mm |
~ |
|
Crystal Bubble/Defects Percentage
|
< 15% |
~ |
Defects zones include bubbles, scattering centers, grain boundary, twinning, inclusion, stress distortion, and cracks inside. Defect zones need to be marked。
|